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NTD4302
Power MOSFET
68 A, 30 V, N ? Channel DPAK
Features
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?
?
?
?
?
?
?
Ultra Low R DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I DSS Specified at Elevated Temperature
DPAK Mounting Information Provided
These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
30 V
http://onsemi.com
R DS(on) TYP
7.8 m W @ 10 V
N ? Channel
I D MAX
68 A
Applications
D
? DC ? DC Converters
? Low Voltage Motor Control
? Power Management in Portable and Battery Powered Products:
i.e., Computers, Printers, Cellular and Cordless Telephones,
and PCMCIA Cards
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
G
S
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
Vdc
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ? Junction ? to ? Case
Total Power Dissipation @ T C = 25 ° C
Continuous Drain Current @ T C = 25 ° C (Note 4)
Continuous Drain Current @ T C = 100 ° C
Thermal Resistance ? Junction ? to ? Ambient
(Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 100 ° C
Pulsed Drain Current (Note 3)
V GS
R q JC
P D
I D
I D
R q JA
P D
I D
I D
I DM
± 20
1.65
75
68
43
67
1.87
11.3
7.1
36
Vdc
° C/W
W
A
A
° C/W
W
A
A
A
1 2
3
4
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
Gate
4
Drain
2
Drain
3
Source
Thermal Resistance ? Junction ? to ? Ambient
(Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 100 ° C
Pulsed Drain Current (Note 3)
Operating and Storage Temperature Range
R q JA
P D
I D
I D
I DM
T J , T stg
120
1.04
8.4
5.3
28
? 55 to
150
° C/W
W
A
A
A
° C
4
DPAK
CASE 369D
(Straight Lead)
4
Drain
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 30 Vdc, V GS = 10 Vdc,
Peak I L = 17 Apk, L = 5.0 mH, R G = 25 W )
E AS
722
mJ
1
2
3
STYLE 2
1
2
3
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T L
260
° C
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.
Y = Year
WW = Work Week
T4302 = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
October, 2010 ? Rev. 8
1
Publication Order Number:
NTD4302/D
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